- fast switching device (trr<4.0ns) - surface mount device type - moisture sensitivity level 1 - matte tin (sn) lead finish - pb free version and rohs compliant - packing code with suffix "g" means green compound (halogen-free) - case: bend lead sod-323 small outline plastic package - polarity: indicated by cathode band - weight: 4.85 0.5 mg - marking code: a6 symbol units p d mw i o ma t j , t stg o c symbol units v( br ) v c j pf t rr ns document number: ds_s1311003 version: c14 sod-323 i f = 10 ma i f = 1.0 ma i f = i r = 10 ma , r l = 100 ? v r = 0 , f = 1.0 mhz v r = 25 v v r = 75 v i f = 150 ma i f = 50 ma -1.5 -4 reverse breakdown voltage forward voltage reverse leakage voltage junction capacitance reverse recovery time i r = 100 a - 0.855 - 1.000 - 1.250 v a v f i r - 0.715 -1.00 -0.03 min max mean forward current 250 a 1.0 4.0 i frm non-repetitive peak forward current pulse width = 1 sec pulse width = 1 msec - 100 maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter value power dissipation 200 junction and storage temperature range -65 to + 150 parameter mechanical data - terminal: matte tin plat ed, lead free., solderable per mil-std-202, method 208 guaranteed - high temperature soldering guaranteed : 260c/10s BAS316 taiwan semiconductor small signal product 200mw high voltage smd switching diode features
(t a =25c unless otherwise noted) document number: ds_s1311003 version: c14 ratings and characteristics curves BAS316 taiwan semiconductor small signal product 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 instantaneous forward current (ma) instantaneous forward voltage (v) fig. 1 typical forward characteristics 0.01 0.1 1 10 100 0 20406080100120 reverse current (ua) reverse voltage (v) fig. 2 reverse current vs. reverse voltage 0 50 100 150 200 250 0 25 50 75 100 125 150 175 power dissipation (mw) ambient temperature (c) fig. 3 admissible power dissipation curve 0 0.3 0.6 0.9 1.2 1.5 0246810121416 junction capacitance (pf) reverse voltage (v) fig. 4 typical junction capacitance
dimensions min max min max a 1.150 1.400 0.045 0.055 b 2.300 2.700 0.091 0.106 c 0.250 0.450 0.010 0.018 d 1.600 1.800 0.063 0.071 e 0.800 1.000 0.031 0.039 f 0.050 0.177 0.002 0.007 g h - 0.100 - 0.004 suggested pad layout g x x1 y document number: ds_s1311003 version: c14 order information (example) min 0.59 dim. unit (mm) unit (inch) 0.475 ref 0.019 ref dim. unit (mm) unit (inch) min 0.060 1.52 BAS316 taiwan semiconductor small signal product 0.018 0.45 0.106 2.70 0.023 b a e d c f g h BAS316 rrg green compound ? code packing ? code part ? no.
small signal product assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_s1311003 version: c14 BAS316 taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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